- Package / Case :
- Configuration :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 210 W | Full Bridge | 1.7 kV | 2 V | 45 A | 600 nA | ||||
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查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 210 W | Single | 1.7 kV | 2 V | 45 A | 600 nA | ||||
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查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 210 W | Dual | 1.7 kV | 2 V | 45 A | 600 nA | ||||
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查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 210 W | Single | 1.7 kV | 2 V | 45 A | 600 nA |