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Package / Case :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
5 产品
图片 型号 价格 数量 库存 制造商 描述 Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
FP35R12KT4_B15
1+
$29.2040
5+
$28.6680
10+
$27.9280
25+
$27.3800
获得报价
RFQ
7
有现货
Infineon Technologies IGBT Modules IGBT 1200V 35A IGBT Silicon Modules   + 150 C 210 W   1200 V 2.15 V 35 A 100 nA
Default Photo
50+
$36.1360
100+
$34.8560
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RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP3-32 + 100 C 210 W Full Bridge 1.7 kV 2 V 45 A 600 nA
Default Photo
50+
$19.6880
100+
$19.2280
250+
$18.8240
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RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C 210 W Single 1.7 kV 2 V 45 A 600 nA
Default Photo
50+
$23.2680
100+
$22.7240
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RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C 210 W Dual 1.7 kV 2 V 45 A 600 nA
Default Photo
50+
$19.6880
100+
$19.2280
250+
$18.8240
查看
RFQ
Microsemi IGBT Modules Power Module - IGBT IGBT Silicon Modules SP1-12 + 100 C 210 W Single 1.7 kV 2 V 45 A 600 nA