- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- 已选择过滤 :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
7
有现货
|
Infineon Technologies | IGBT Modules IGBT 1200V 35A | IGBT Silicon Modules | + 150 C | 210 W | 1200 V | 2.15 V | 35 A | 100 nA | |||||
|
查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 210 W | Full Bridge | 1.7 kV | 2 V | 45 A | 600 nA | ||||
|
查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 210 W | Single | 1.7 kV | 2 V | 45 A | 600 nA | ||||
|
查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 210 W | Dual | 1.7 kV | 2 V | 45 A | 600 nA | ||||
|
查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 210 W | Single | 1.7 kV | 2 V | 45 A | 600 nA |