1 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 175 C | 170 W | Single | 1.2 kV | 2.05 V | 45 A | 400 nA |
