- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- 已选择过滤 :
28 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
114
有现货
|
STMicroelectronics | IGBT Modules N-Ch 600 Volt 150Amp | ISOTOP-4 | + 150 C | Tube | 600 W | Single Dual Emitter | 600 V | 1.2 V | 200 A | +/- 100 nA | |||
|
|
获得报价 |
50
有现货
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 175 C | 220 W | Single | 1.2 kV | 1.85 V | 65 A | 400 nA | |||
|
|
|
获得报价 |
40
有现货
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 480 W | Single | 1.2 kV | 1.7 V | 140 A | 400 nA | |||
|
|
|
获得报价 |
42
有现货
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 260 W | Single | 1.2 kV | 1.7 V | 55 A | 500 nA | |||
|
|
|
获得报价 |
44
有现货
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 347 W | Single | 1.2 kV | 1.7 V | 75 A | 500 nA | |||
|
|
|
获得报价 |
49
有现货
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 260 W | Single | 1.2 kV | 1.7 V | 55 A | 500 nA | |||
|
|
获得报价 |
4
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | Bulk | 570 W | Single | 1.2 kV | 3.2 V | 123 A | 600 nA | ||
|
|
|
获得报价 |
12
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 462 W | Single | 600 V | 2.2 V | 151 A | +/- 100 nA | |||
|
|
|
获得报价 |
8
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 284 W | Single | 600 V | 2.2 V | 86 A | +/- 100 nA | |||
|
|
|
获得报价 |
13
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 431 W | Single | 600 V | 2.2 V | 130 A | +/- 100 nA | |||
|
|
|
获得报价 |
6
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | Bulk | 625 W | Single | 1.2 kV | 2.5 V | 149 A | +/- 100 nA | ||
|
|
|
获得报价 |
15
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 329 W | Single | 600 V | 2.2 V | 100 A | +/- 100 nA | |||
|
|
|
获得报价 |
4
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 446 W | Single | 1.2 kV | 1.7 V | 153 A | 600 nA | |||
|
|
|
获得报价 |
14
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 284 W | Single | 900 V | 3.2 V | 64 A | +/- 100 nA | |||
|
|
|
获得报价 |
14
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 431 W | Single | 600 V | 2.2 V | 130 A | +/- 100 nA | |||
|
|
|
获得报价 |
16
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 284 W | Single | 600 V | 2.2 V | 86 A | +/- 100 nA | |||
|
|
|
获得报价 |
13
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | Bulk | 462 W | Single | 600 V | 2.2 V | 151 A | +/- 100 nA | ||
|
|
|
获得报价 |
15
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 417 W | Single | 1.2 kV | 3.5 V | 84 A | +/- 250 nA | |||
|
|
|
获得报价 |
2
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | Bulk | 500 W | Single | 600 V | 2.1 V | 148 A | 300 nA | ||
|
|
|
获得报价 |
24
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | ISOTOP-4 | + 150 C | Bulk | 595 W | Single | 1.2 kV | 3.5 V | 118 A | +/- 250 nA | ||
|
|
|
获得报价 |
3
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | ISOTOP-4 | + 150 C | Bulk | 595 W | Single | 1.2 kV | 3.5 V | 118 A | +/- 250 nA | ||
|
|
|
获得报价 |
3
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 329 W | Single | 600 V | 2.2 V | 100 A | +/- 100 nA | |||
|
|
|
获得报价 |
2
有现货
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 500 W | Single | 600 V | 2.1 V | 148 A | 300 nA | |||
|
|
|
查看 | Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 500 W | Single | 600 V | 2 V | 195 A | 300 nA | ||||
|
|
|
获得报价 |
50
有现货
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 175 C | 220 W | Single | 1.2 kV | 1.85 V | 65 A | 400 nA | |||
|
|
|
查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 175 C | 170 W | Single | 1.2 kV | 2.05 V | 45 A | 400 nA | ||||
|
|
|
查看 | Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 245 W | Single | 600 V | 2.2 V | 67 A | +/- 100 nA | ||||
|
|
|
查看 | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | ISOTOP-4 | + 150 C | 312 W | Single | 1.2 kV | 2.05 V | 80 A | 120 nA |
