- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Gain | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
375
有现货
|
NXP / Freescale | RF MOSFET Transistors MV9 75W 12.5V TO270WB4 | SMD/SMT | TO-270-WB-4 | + 150 C | Reel | 76 W | Si | N-Channel | - 500 mV, + 40 V | 3 A | 18.5 dB | |||
|
获得报价 |
1,004
有现货
|
Toshiba | RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS | SMD/SMT | PW-X-4 | Reel | 7 W | Si | N-Channel | 20 V | 3 A | 11.4 dB | ||||
|
获得报价 |
48
有现货
|
NXP / Freescale | RF MOSFET Transistors MOSFET 2450 MHz 140 W 28 V | SMD/SMT | NI-880H-2 | + 150 C | Reel | 140 W | Si | N-Channel | 210 mV | 3 A | 15.2 dB | |||
|
查看 | Toshiba | RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS | SMD/SMT | PW-X-4 | Reel | 2.2 W | Si | N-Channel | 10 V | 3 A | 13.5 dB | |||||
|
获得报价 |
939
有现货
|
Toshiba | RF MOSFET Transistors N-Ch Radio Freq 3A 20W 12V VDSS | SMD/SMT | PW-X-4 | Reel | Si | N-Channel | 12 V | 3 A | 11.5 dB | |||||
|
查看 | NXP / Freescale | RF MOSFET Transistors BL RF | SMD/SMT | OM-880X-2L2L-4 | + 150 C | Reel | 56 W | Si | N-Channel | - 500 mV, + 65 V | 3 A | 18.7 dB |