- Package / Case :
- Maximum Clock Frequency :
- Organization :
- Access Time :
30 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Memory Size | Maximum Clock Frequency | Supply Voltage - Max | Supply Voltage - Min | Interface Type | Organization | Access Time | Supply Current - Max | |
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-119 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 256K x 72 18M | SMD/SMT | BGA-209 | 0 C | + 70 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 256 k x 72 | 7.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 256K x 72 18M | SMD/SMT | BGA-209 | 0 C | + 70 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 256 k x 72 | 7.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-119 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-119 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-119 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 6.5 ns | 210 mA, 210 mA | ||||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 18 Mbit | 200 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 6.5 ns | 210 mA, 210 mA |