- Package / Case :
- Organization :
24 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Memory Size | Maximum Clock Frequency | Supply Voltage - Max | Supply Voltage - Min | Interface Type | Organization | Access Time | Supply Current - Max | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 32M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 400 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4 ns | 305 mA, 415 mA |
