- Package / Case :
- Maximum Operating Temperature :
13 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Memory Size | Maximum Clock Frequency | Supply Voltage - Max | Supply Voltage - Min | Interface Type | Organization | Access Time | Supply Current - Max | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 4M x 18 72M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 3.6 V | 2.3 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 1.8/2.5V 4M x 18 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 2.7 V | 1.7 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 1.8/2.5V 4M x 18 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 2.7 V | 1.7 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 4M x 18 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 3.6 V | 2.3 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 4M x 18 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 3.6 V | 2.3 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 1.8/2.5V 4M x 18 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 2.7 V | 1.7 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 4M x 18 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 3.6 V | 2.3 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 4M x 18 72M | SMD/SMT | BGA-119 | - 40 C | + 70 C | Tray | 72 Mbit | 167 MHz | 3.6 V | 2.3 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 4M x 18 72M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 3.6 V | 2.3 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 2.5 or 3.3V 4M x 18 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 3.6 V | 2.3 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 1.8/2.5V 4M x 18 72M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 2.7 V | 1.7 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 1.8/2.5V 4M x 18 72M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 2.7 V | 1.7 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA | ||||
|
查看 | GSI Technology | SRAM 1.8/2.5V 4M x 18 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 72 Mbit | 167 MHz | 2.7 V | 1.7 V | Parallel | 4 M x 18 | 8 ns | 215 mA, 260 mA |