RAM杂项 - Inix Electronic

已选择过滤 :

6 产品

型号	数量		制造商	描述	Package / Case	Series	Packaging	Memory Type	Memory Size	Technology	Access Time	Mounting Type	Operating Temperature	Part Status	Memory Format	Clock Frequency	Write Cycle Time - Word, Page	Memory Interface	Voltage - Supply	Supplier Device Package	Minimum Quantity
MT46H128M32L2MC-6 WT:B	获得报价查看	PDF RFQ	Micron Technology Inc.	IC DRAM 4G PARALLEL 240WFBGA	240-WFBGA	-	Tray	Volatile	4Gb (128M x 32)	SDRAM - Mobile LPDDR	5.0ns	Surface Mount	-25°C ~ 85°C (TA)	Obsolete	DRAM	166MHz	15ns	Parallel	1.7 V ~ 1.95 V	240-WFBGA (14x14)	1000
MT46H128M32L2MC-5 WT:B	获得报价查看	PDF RFQ	Micron Technology Inc.	IC DRAM 4G PARALLEL 240WFBGA	240-WFBGA	-	Tray	Volatile	4Gb (128M x 32)	SDRAM - Mobile LPDDR	5.0ns	Surface Mount	-25°C ~ 85°C (TA)	Obsolete	DRAM	200MHz	15ns	Parallel	1.7 V ~ 1.95 V	240-WFBGA (14x14)	1000
MT46H128M32L2MC-6 WT:B TR	获得报价查看	PDF RFQ	Micron Technology Inc.	IC DRAM 4G PARALLEL 240WFBGA	240-WFBGA	-	Tape & Reel (TR)	Volatile	4Gb (128M x 32)	SDRAM - Mobile LPDDR	5.0ns	Surface Mount	-25°C ~ 85°C (TA)	Obsolete	DRAM	166MHz	15ns	Parallel	1.7 V ~ 1.95 V	240-WFBGA (14x14)	1000
MT46H128M32L2MC-5 WT:B TR	获得报价查看	PDF RFQ	Micron Technology Inc.	IC DRAM 4G PARALLEL 240WFBGA	240-WFBGA	-	Tape & Reel (TR)	Volatile	4Gb (128M x 32)	SDRAM - Mobile LPDDR	5.0ns	Surface Mount	-25°C ~ 85°C (TA)	Obsolete	DRAM	200MHz	15ns	Parallel	1.7 V ~ 1.95 V	240-WFBGA (14x14)	1000
MT46H128M32L2MC-6 IT:A	获得报价查看	PDF RFQ	Micron Technology Inc.	IC DRAM 4G PARALLEL 240WFBGA	240-WFBGA	-	Tray	Volatile	4Gb (128M x 32)	SDRAM - Mobile LPDDR	5.0ns	Surface Mount	-40°C ~ 85°C (TA)	Obsolete	DRAM	166MHz	15ns	Parallel	1.7 V ~ 1.95 V	240-WFBGA (14x14)	1000
MT46H128M32L2MC-5 IT:A	获得报价查看	PDF RFQ	Micron Technology Inc.	IC DRAM 4G PARALLEL 240WFBGA	240-WFBGA	-	Tray	Volatile	4Gb (128M x 32)	SDRAM - Mobile LPDDR	5.0ns	Surface Mount	-40°C ~ 85°C (TA)	Obsolete	DRAM	200MHz	15ns	Parallel	1.7 V ~ 1.95 V	240-WFBGA (14x14)	1000

1 / 1 页