- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
3 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
8,022
有现货
|
Fairchild Semiconductor | MOSFET 30V Dual N & P-Ch PowerTrench MOSFET | 20 V, 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 60 V | 8.6 A | 17 mOhms, 20.5 mOhms | Enhancement | PowerTrench | ||||
|
|
|
获得报价 |
3,798
有现货
|
Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.6 A | 20 mOhms | Enhancement | |||||
|
|
|
获得报价 |
2,389
有现货
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 25Vgs 9A 16mOhm 1.6V | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.6 A | 20 mOhms | 800 mV | 8.7 nC | Enhancement |
