- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
7,179
有现货
|
Infineon / IR | MOSFET MOSFT DUAL NCh 30V 9.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | ||||||
|
|
|
获得报价 |
2,861
有现货
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 35 mOhms | 2.1 V | 6 nC | Enhancement | ||
|
|
|
查看 | Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 9.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 18.7 mOhms | 4.6 nC | |||||||
|
|
|
获得报价 |
2,339
有现货
|
Infineon / IR | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC |
