- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
4,651
有现货
|
Fairchild Semiconductor | MOSFET -30V P-Channel PowerTrench MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 9.3 mOhms | Enhancement | PowerTrench | ||||
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获得报价 |
3,406
有现货
|
Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 9 mOhms | Enhancement | PowerTrench | ||||
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|
|
获得报价 |
1,042
有现货
|
Diodes Incorporated | MOSFET P-Channel 2.5W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 11 mOhms | - 2 V | 60.4 nC | Enhancement | |||
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查看 | Diodes Incorporated | MOSFET Single -30V P-Ch Enh FET -20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 17 mOhms | - 1 V | 60.4 nC | Enhancement |
