- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- 已选择过滤 :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,418
有现货
|
IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
|
获得报价 |
175
有现货
|
IXYS | MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 98 A | 50 mOhms | 5 V | 197 nC | HyperFET | ||||||
|
获得报价 |
58
有现货
|
IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
|
获得报价 |
45
有现货
|
IXYS | MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 98 A | 50 mOhms | 5 V | 197 nC | HyperFET | ||||||
|
获得报价 |
19
有现货
|
IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 430 mOhms | 6.5 V | 197 nC | Enhancement | Polar, HiPerFET |