- 已选择过滤 :
5 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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获得报价 |
4,060
有现货
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | ||
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获得报价 |
6,560
有现货
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | ||
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获得报价 |
4,496
有现货
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | |||
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|
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获得报价 |
2,965
有现货
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | |||
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|
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获得报价 |
4,235
有现货
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement |
