- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- 已选择过滤 :
6 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
900
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.6 mOhms | 2 V | 183 nC | Enhancement | ||
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|
获得报价 |
954
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.3 mOhms | 2 V | 183 nC | Enhancement | ||
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|
获得报价 |
956
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.6 mOhms | 2 V | 183 nC | Enhancement | ||
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|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.4 mOhms | 4 V | 183 nC | Enhancement | ||
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查看 | STMicroelectronics | MOSFET N-Ch 60V 0.0016 Ohm 180A DeepGATE VI | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.4 mOhms | 4 V | 183 nC | ||||||
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查看 | STMicroelectronics | MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI | 20 V | SMD/SMT | H2PAK-2 | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.4 mOhms | 4 V | 183 nC |
