- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
4,172
有现货
|
Toshiba | MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 8 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 840 mOhms | 0.4 V to 1 V | 1 nC | ||
|
|
获得报价 |
5,600
有现货
|
Toshiba | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS | 12 V | SMD/SMT | uDFN-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 82 mOhms | 0.4 V to 1 V | 3.2 nC | ||||
|
|
获得报价 |
1,127
有现货
|
Toshiba | MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 109 mOhms | 0.4 V to 1 V | 2.2 nC |
