1 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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获得报价 |
35
有现货
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Advanced Linear Devices | MOSFET Dual EPAD(R) N-Ch | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 12 mA, 12 mA | 500 Ohms, 500 Ohms | - 20 mV | Depletion |
