- Mounting Style :
- Package / Case :
2 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
9
有现货
|
Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 180 mV, 180 mV | Enhancement | EPAD | ||
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|
获得报价 |
48
有现货
|
Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 180 mV, 180 mV | Enhancement | EPAD |
