- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
21 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
32,163
有现货
|
Nexperia | MOSFET TAPE7 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 300 mA | 2.1 Ohms | Enhancement | |||||
|
|
获得报价 |
6,324
有现货
|
Fairchild Semiconductor | MOSFET 250V 3.1A 2.1Ohm P-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 3.1 A | 2.1 Ohms | Enhancement | QFET | ||||
|
|
获得报价 |
4,863
有现货
|
Fairchild Semiconductor | MOSFET 500V N-Channel Adv QFET C-series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.5 A | 2.1 Ohms | Enhancement | |||||
|
|
|
获得报价 |
3,465
有现货
|
Fairchild Semiconductor | MOSFET UNIFET2 500V | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.5 A | 2.1 Ohms | 5 V | 6.2 nC | ||||
|
|
|
获得报价 |
968
有现货
|
STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | |||
|
|
获得报价 |
3,149
有现货
|
Infineon Technologies | MOSFET N-Ch 600V 2.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.3 A | 2.1 Ohms | 3 V | 6.7 nC | CoolMOS | |||
|
|
获得报价 |
1,748
有现货
|
STMicroelectronics | MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 525 V | 2.5 A | 2.1 Ohms | 3.75 V | 11 nC | ||||||
|
|
|
获得报价 |
818
有现货
|
STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | |||
|
|
获得报价 |
1,316
有现货
|
Fairchild Semiconductor | MOSFET 500V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.1 Ohms | 5 V | 6.2 nC | UniFET | |||||
|
|
|
获得报价 |
697
有现货
|
STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | |||
|
|
获得报价 |
1,599
有现货
|
Diodes Incorporated | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 250 mA | 2.1 Ohms | 1 V | 7.6 nC | Enhancement | |||
|
|
|
获得报价 |
185
有现货
|
Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | |||
|
|
|
获得报价 |
365
有现货
|
Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | |||
|
|
获得报价 |
10,647
有现货
|
Toshiba | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | ||||||||
|
|
|
获得报价 |
2,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | |||
|
|
|
获得报价 |
2,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | |||
|
|
|
获得报价 |
2,500
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | |||
|
|
获得报价 |
1,500
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | PowerFLAT-5x6-VHV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 4 nC | Enhancement | |||
|
|
|
查看 | STMicroelectronics | MOSFET N-Ch 525V 2.1 Ohm 4.0A IPAK | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 525 V | 4 A | 2.1 Ohms | ||||||||||
|
|
获得报价 |
257
有现货
|
Toshiba | MOSFET N-Ch Sm Sig FET Id 0.2A 60V 20VGSS | SMD/SMT | SOT-346-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V | ||||||||
|
|
查看 | Toshiba | MOSFET N-Ch Sm Sig FET 0.2A 60V 2-in-1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V |
