- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
5 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
6,085
有现货
|
Infineon / IR | MOSFET MOSFT 30V 11A 13.8mOhm 7.2nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 18.2 mOhms | 7.2 nC | |||||
|
|
获得报价 |
1,031
有现货
|
ON Semiconductor | MOSFET NFET TO220 100V 72A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 18.2 mOhms | ||||
|
|
获得报价 |
1,414
有现货
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 43 A | 18.2 mOhms | 7 nC | Enhancement | ||
|
|
获得报价 |
780
有现货
|
ON Semiconductor | MOSFET NFET D2PAK 100V 59A 20MO | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 100 V | 58 A | 18.2 mOhms | ||||||||
|
|
|
获得报价 |
3,788
有现货
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7.2nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 11 A | 18.2 mOhms | 7.2 nC | Enhancement |
