- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
902
有现货
|
Diodes Incorporated | MOSFET Dual 30V N Chl HDMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.3 A | 135 mOhms | 1 V | 8 nC | Enhancement | ||
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查看 | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC | ||||
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|
获得报价 |
1,488
有现货
|
Infineon Technologies | MOSFET N-Ch 20V 2.3A TSOP-6 | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.3 A | 57 mOhms | 1.7 nC |
