- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,436
有现货
|
Infineon / IR | MOSFET 1 P-CH -30V HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 21 A | 4.6 mOhms | 165 nC | ||
|
|
获得报价 |
653
有现货
|
Infineon Technologies | MOSFET MOSFT PCh -21A 117mOhm 64.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 21 A | 117 mOhms | 64.7 nC |
