- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
17 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
5,180
有现货
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | |||
|
|
|
获得报价 |
2,793
有现货
|
Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 2.5 mOhms, 900 uOhms | 1.2 V, 1.2 V | 12 nC, 37 nC | Enhancement | |||
|
|
|
获得报价 |
2,504
有现货
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | OptiMOS | ||
|
|
|
获得报价 |
2,414
有现货
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.8 mOhms | 1.2 V, 1.2 V | 10 nC, 12.8 nC | Enhancement | |||
|
|
获得报价 |
1,641
有现货
|
Nexperia | MOSFET BUK9K6R8-40E/LFPAK56D/REEL 7 | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 40 A, 40 A | 5 mOhms, 5 mOhms | 1.4 V, 1.4 V | 22.2 nC, 22.2 nC | Enhancement | |||
|
|
|
获得报价 |
1,255
有现货
|
Nexperia | MOSFET BUK9K13-60E/LFPAK56D/REEL 7" Q | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 40 A, 40 A | 9 mOhms, 9 mOhms | 1.4 V, 1.4 V | 22.4 nC, 22.4 nC | Enhancement | |||
|
|
|
获得报价 |
490
有现货
|
Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.7 mOhms, 1.3 mOhms | 1.6 V, 1.6 V | 3 nC, 8.8 nC | OptiMOS | |||
|
|
|
获得报价 |
440
有现货
|
Nexperia | MOSFET MOSFET N-CH 30V 40A | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.5 mOhms, 3.5 mOhms | 1.4 V, 1.4 V | 26.7 nC, 26.7 nC | Enhancement | |||
|
|
|
获得报价 |
49
有现货
|
Infineon Technologies | MOSFET TRANSITIONAL MOSFETS | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.5 mOhms, 900 uOhms | 1 V, 1 V | 6.6 nC, 30.6 nC | Enhancement | |||
|
|
|
获得报价 |
1,500
有现货
|
Nexperia | MOSFET BUK7K13-60E/LFPAK56D/REEL 7" Q | 20 V, 20 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 40 A, 40 A | 8 mOhms, 8 mOhms | 2.4 V, 2.4 V | 30.1 nC, 30.1 nC | Enhancement | |||
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|
|
查看 | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.1 mOhms | 1.2 V, 1.2 V | 10 nC, 18.4 nC | Enhancement | ||||
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|
|
获得报价 |
485
有现货
|
Nexperia | MOSFET MOSFET N-CH 30V 40A | 10 V, 10 V | SMD/SMT | LFPAK56D-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 3.9 mOhms | 1.4 V, 1.4 V | 22.6 nC, 22.6 nC | Enhancement | |||
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查看 | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | ||||
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查看 | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.8 mOhms | 1.2 V, 1.2 V | 10 nC, 12.8 nC | Enhancement | OptiMOS | |||
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查看 | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | OptiMOS | |||
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查看 | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.1 mOhms | 1.2 V, 1.2 V | 10 nC, 18.4 nC | Enhancement | OptiMOS | |||
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查看 | Infineon Technologies | MOSFET LV POWER MOS | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.5 mOhms, 900 uOhms | 1 V, 1 V | 6.6 nC, 30.6 nC | Enhancement | OptiMOS |
