- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,447
有现货
|
Texas Instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 15 V | - 1.6 A | 400 mOhms | Enhancement | ||||||
|
获得报价 |
1,245
有现货
|
Texas Instruments | MOSFET 20V PCH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.6 A | 150 mOhms, 285 mOhms | - 0.8 V | 1.9 nC | NexFET | ||||
|
获得报价 |
4,775
有现货
|
Texas Instruments | MOSFET 20V P-CH FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 245 mOhms | - 950 mV | 0.96 nC | Depletion | NexFET | |||
|
获得报价 |
1,997
有现货
|
Texas Instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 47 mOhms | - 850 mV | 2.2 nC | Enhancement | NexFET | |||
|
获得报价 |
769
有现货
|
Texas Instruments | MOSFET MOSFET 10ns RT | - 15 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Tube | 1 Channel | Si | P-Channel | - 15 V | - 1.6 A | 180 mOhms | Enhancement | ||||||
|
获得报价 |
1,950
有现货
|
Texas Instruments | MOSFET 20V,P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 245 mOhms | - 950 mV | 0.96 nC |