- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,637
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | 8 V | SMD/SMT | SOT-23-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7 A | 22.5 mOhms | 1 V | 22 nC | |||||
|
获得报价 |
578
有现货
|
STMicroelectronics | MOSFET N-Ch 30V .025Ohm 6A STripFET VI | SMD/SMT | SOT-23-6 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 6 A | 40 mOhms | 1 V | 3.6 nC | |||||||
|
获得报价 |
3,333
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | 8 V | SMD/SMT | SOT-23-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 100 mOhms | 400 mV | 4.8 nC | Enhancement | ||||
|
获得报价 |
553
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOT-23-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 48 mOhms | - 2.5 V | 6 nC | Enhancement | |||||
|
获得报价 |
5,088
有现货
|
STMicroelectronics | MOSFET N-Ch 20V 0.025 Ohm 5 A STripFET(TM) V | 8 V | SMD/SMT | SOT-23-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5 A | 31 mOhms | 0.7 V | 6 nC | Enhancement | STripFET |