- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
22 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
999
有现货
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 4 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||
|
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | ||
|
|
|
获得报价 |
1,500
有现货
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||
|
|
获得报价 |
250
有现货
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||
|
|
|
获得报价 |
496
有现货
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 12 A | 0.37 Ohms | 3 V | 29 nC | Enhancement | |||
|
|
获得报价 |
100
有现货
|
STMicroelectronics | MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power M... | +/- 30 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 1050 V | 44 A | 0.1 Ohms | 3 V | 175 nC | Enhancement | |||
|
|
|
获得报价 |
3,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | ||
|
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||
|
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||
|
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||
|
|
|
获得报价 |
2,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | ||
|
|
|
获得报价 |
2,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | ||
|
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET N-channel 800 V, 0.75 Ohm typ., 7 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||
|
|
|
获得报价 |
2,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | ||
|
|
获得报价 |
600
有现货
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||
|
|
|
获得报价 |
1,000
有现货
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||
|
|
|
获得报价 |
2,000
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | ||
|
|
|
获得报价 |
2,500
有现货
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement |
