- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,973
有现货
|
STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.7 mOhms | 2.5 V | 193 nC | Enhancement | |||
|
获得报价 |
1,232
有现货
|
STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.7 mOhms | 2.5 V | 193 nC | Enhancement | |||
|
获得报价 |
512
有现货
|
STMicroelectronics | MOSFET N-CH 80V 17mOhm 180A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.1 mOhms | 2 V | 193 nC | Enhancement | |||
|
获得报价 |
726
有现货
|
STMicroelectronics | MOSFET N-CH 80V 17mOhm 180A STripFET VII | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.1 mOhms | 2 V | 193 nC | Enhancement | |||
|
获得报价 |
1,982
有现货
|
STMicroelectronics | MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.5 mOhms | 2 V to 4 V | 193 nC |