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1 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
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获得报价 |
13
有现货
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GeneSiC Semiconductor | JFET SiC High Temperature JT | Through Hole | TO-46-3 | + 225 C | Bulk | 20 W | Single | N-Channel | 100 V | 9 A | 620 mOhms | 30 V | 5.8 A |
