- Mounting Style :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
29 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,848
有现货
|
Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 3.4 V | 30 A | +/- 20 V | ||||
|
获得报价 |
731
有现货
|
Infineon / IR | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.15 V | 40 A | 100 nA | 20 V | |||
|
获得报价 |
3,787
有现货
|
Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.6 V | 42 A | +/- 20 V | ||||
|
获得报价 |
622
有现货
|
Infineon / IR | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 60 A | +/- 20 V | ||||
|
获得报价 |
97
有现货
|
IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | ||||
|
获得报价 |
40
有现货
|
IXYS | IGBT Transistors | Through Hole | ISOPLUS-i4-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 40 A | +/- 100 nA | +/- 20 V | ||||
|
获得报价 |
446
有现货
|
Infineon / IR | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 1.7 V | 49 A | +/- 20 V | |||||
|
获得报价 |
353
有现货
|
Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | |||||
|
获得报价 |
608
有现货
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 20 V | |||||
|
获得报价 |
40
有现货
|
IXYS | IGBT Transistors | SMD/SMT | TO-268-2 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | ||||
|
获得报价 |
271
有现货
|
Fairchild Semiconductor | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 100 nA | +/- 20 V | |||
|
获得报价 |
213
有现货
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 1.2 kV | 3.5 V | 30 A | +/- 20 V | |||||
|
获得报价 |
265
有现货
|
Infineon Technologies | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 60 A | +/- 20 V | ||||
|
获得报价 |
167
有现货
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
|
获得报价 |
95
有现货
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 20 V | |||||
|
获得报价 |
309
有现货
|
Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | |||
|
获得报价 |
181
有现货
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
|
获得报价 |
320
有现货
|
Infineon / IR | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 2.6 V | 42 A | +/- 20 V | |||||
|
获得报价 |
350
有现货
|
Infineon / IR | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | |||||
|
获得报价 |
115
有现货
|
Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-262-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | ||||
|
获得报价 |
300
有现货
|
Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 49 A | 100 nA | +/- 20 V | |||
|
获得报价 |
160
有现货
|
Infineon / IR | IGBT Transistors DISCRETES | Through Hole | TO-247AD-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.32 V | 60 A | +/- 100 nA | +/- 20 V | |||
|
获得报价 |
119
有现货
|
Infineon / IR | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
|
获得报价 |
192
有现货
|
Infineon / IR | IGBT Transistors IGBT DISCRETES | Through Hole | TO-220-3 | + 150 C | Tube | 160 W | Single | 330 V | 1.69 V | 70 A | +/- 100 nA | +/- 30 V | |||
|
获得报价 |
29
有现货
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.72 V | 40 A | 100 nA | +/- 20 V | |||
|
获得报价 |
575
有现货
|
Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 1.7 V | 49 A | +/- 20 V | |||||
|
获得报价 |
3,000
有现货
|
Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-25KHZ DSCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.6 V | 42 A | +/- 20 V | ||||
|
查看 | Infineon Technologies | IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 3.4 V | 30 A | +/- 20 V | |||||
|
获得报价 |
168
有现货
|
Infineon / IR | IGBT Transistors 300V 40A Ultra Fast | Through Hole | TO-247-3 | Tube | 160 W | Single | 300 V | 2.1 V | 70 A | +/- 20 V |