- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
2 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
411
有现货
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 15A | Through Hole | TO-247-3 | + 150 C | Tube | 110 W | Single | 1200 V | 2.2 V | 30 A | 100 nA | +/- 20 V | |||
|
获得报价 |
45
有现货
|
IXYS | IGBT Transistors 20 Amps 1700 V 4 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 110 W | Single | 1.7 kV | 2.7 V | 20 A | 100 nA | +/- 20 V |