- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
452
有现货
|
IXYS | IGBT Transistors 650V/80A XPT Copacked TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.85 V | 80 A | 100 nA | 30 V | |||
|
获得报价 |
463
有现货
|
Fairchild Semiconductor | IGBT Transistors 1100 V, 50 A Shorted-anode IGBT | Through Hole | TO-3PN | + 175 C | Tube | 300 W | 1100 V | 2.7 V | 50 A | 500 nA | 25 V | ||||
|
获得报价 |
1
有现货
|
Fairchild Semiconductor | IGBT Transistors 650V 30A FS Planar Gen2 IGBT | Through Hole | TO-3PN-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.29 V | 60 A | 400 nA | +/- 20 V | |||
|
获得报价 |
24
有现货
|
IXYS | IGBT Transistors 650V/80A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.85 V | 80 A | 100 nA | 30 V | |||
|
获得报价 |
165
有现货
|
ON Semiconductor | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 200 nA | +/- 20 V | |||
|
获得报价 |
210
有现货
|
ON Semiconductor | IGBT Transistors 650V/30A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.6 V | 60 A | 100 nA | +/- 20 V | |||
|
获得报价 |
189
有现货
|
ON Semiconductor | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 100 nA | +/- 20 V | |||
|
获得报价 |
210
有现货
|
ON Semiconductor | IGBT Transistors 600V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2.2 V | 70 A | 200 nA | 20 V | |||
|
获得报价 |
169
有现货
|
ON Semiconductor | IGBT Transistors 650V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | 20 V | |||
|
获得报价 |
30
有现货
|
ON Semiconductor | IGBT Transistors 650V/35A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | +/- 20 V |