- Package / Case :
- Maximum Gate Emitter Voltage :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
406
有现货
|
Infineon / IR | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | ||||
|
获得报价 |
178
有现货
|
Infineon Technologies | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | ||||
|
获得报价 |
35
有现货
|
Infineon / IR | IGBT Transistors 600V co-pack Auto Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | 600 V | 2.1 V | 140 A | 100 nA | 20 V | ||||
|
获得报价 |
70
有现货
|
Infineon / IR | IGBT Transistors 600V co-pack Auto Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | 600 V | 2.1 V | 140 A | 100 nA | 20 V | ||||
|
获得报价 |
174
有现货
|
Infineon Technologies | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247AD-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | ||||
|
获得报价 |
104
有现货
|
Infineon / IR | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247AD-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V |