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1 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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获得报价 |
599
有现货
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A... | Through Hole | MAX-247-3 | + 175 C | 625 W | Single | 650 V | 1.65 V | 160 A | +/- 250 uA | +/- 20 V |
