- Package / Case :
2 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
514
有现货
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 260 W | Single | 650 V | 1.75 V | 30 A | 250 nA | +/- 20 V | |||
|
获得报价 |
376
有现货
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 260 W | Single | 650 V | 1.75 V | 30 A | 250 nA | +/- 20 V |