2 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
97
有现货
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 64 A | 100 nA | 30 V | ||
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|
获得报价 |
63
有现货
|
IXYS | IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 480 W | Single | 1200 V | 4.8 V | 64 A | 100 nA | 30 V |
