- Package / Case :
- Gate-Emitter Leakage Current :
2 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
26
有现货
|
IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-247AD-3 | + 150 C | Tube | Single | 1.2 kV | 3.6 V | 48 A | +/- 100 nA | ||||
|
获得报价 |
8
有现货
|
IXYS | IGBT Modules 40khz PT IGBTs Power Device | TO-263 | + 150 C | Tube | 250 W | Single | 1.2 kV | 1.2 kV | 48 A | 100 nA |