- Package / Case :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3
有现货
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 1.3KA | IGBT Silicon Modules | IHM | + 125 C | 6.25 W | Dual | 1700 V | 2.6 V | 1300 A | 400 nA | |||
|
获得报价 |
2
有现货
|
Infineon Technologies | IGBT Modules N-CH 3.3KV 1.3KA | IGBT Silicon Modules | IHV190 | + 125 C | Dual | 3300 V | 1300 A | ||||||
|
获得报价 |
2
有现货
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 1.3KA | IGBT Silicon Modules | IHM73 | + 125 C | 6.25 kW | Single | 1700 V | 2.6 V | 1300 A | 400 nA | |||
|
查看 | Infineon Technologies | IGBT Modules 3300V 800A CHOPPER | IGBT Silicon Modules | IHM190 | + 125 C | 9.6 kW | Dual | 3300 V | 3.4 V | 1300 A | 400 nA | ||||
|
查看 | Infineon Technologies | IGBT Modules 3300V 800A SINGLE | IGBT Silicon Modules | IHM | + 125 C | 9.6 kW | Single | 3300 V | 3.4 V | 1300 A | 400 nA |