型号	价格	数量		库存	制造商	描述	Mounting Style	Package / Case	Maximum Operating Temperature	Series	Packaging	Maximum Operating Frequency	Pd - Power Dissipation	Configuration	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Typical Input Resistor	Typical Resistor Ratio	DC Collector/Base Gain hfe Min	Continuous Collector Current
DTD123EKT146	1+ $0.1520 10+ $0.1152 100+ $0.0624 1000+ $0.0468 3000+ $0.0404	获得报价	PDF RFQ	3,720 有现货	ROHM Semiconductor	Bipolar Transistors - Pre-Biased NPN 50V 500MA	SMD/SMT	SC-59-3	+ 150 C	DTD123EK	Reel		200 mW	Single	NPN		2.2 kOhms	1	39	500 mA
DTB123EKT146	1+ $0.1520 10+ $0.1152 100+ $0.0624 1000+ $0.0468 3000+ $0.0404	获得报价	PDF RFQ	2,990 有现货	ROHM Semiconductor	Bipolar Transistors - Pre-Biased PNP 50V 500MA	SMD/SMT	SC-59-3	+ 150 C	DTB123EK	Reel			Single	PNP		2.2 kOhms	1	39	500 mA
DDTD123EC-7-F	1+ $0.1200 10+ $0.0792 100+ $0.0332 1000+ $0.0228 3000+ $0.0176	获得报价	PDF RFQ	4,425 有现货	Diodes Incorporated	Bipolar Transistors - Pre-Biased 200MW 2.2K	SMD/SMT	SOT-23-3	+ 150 C	DDTD123	Reel			Single	NPN		2.2 kOhms	1	39	500 mA
DTD123ECT116	1+ $0.1200 10+ $0.0820 100+ $0.0344 1000+ $0.0232 3000+ $0.0184	获得报价	PDF RFQ	3,000 有现货	ROHM Semiconductor	Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors	SMD/SMT	SOT-23-3	+ 150 C	DTx	Reel	200 MHz	200 mW	Single	NPN	50 V	2.2 kOhms	1	39	500 mA
DDTB123EC-7-F	3000+ $0.0144 9000+ $0.0124 24000+ $0.0116 45000+ $0.0108 99000+ $0.0096	获得报价	PDF RFQ	6,000 有现货	Diodes Incorporated	Bipolar Transistors - Pre-Biased 200MW 2.2K	SMD/SMT	SOT-23-3	+ 150 C	DDTB123	Reel			Single	PNP	40 V	2.2 kOhms	1	39	500 mA
DDTD123EU-7-F	3000+ $0.0192 9000+ $0.0164 24000+ $0.0156 45000+ $0.0144 99000+ $0.0128	获得报价	PDF RFQ	21,000 有现货	Diodes Incorporated	Bipolar Transistors - Pre-Biased 200MW 2.2K	SMD/SMT	SOT-323-3	+ 150 C	DDTD123	Reel			Single	NPN		2.2 kOhms	1	39	500 mA
DDTB123EU-7-F	3000+ $0.0192 9000+ $0.0164 24000+ $0.0156 45000+ $0.0144 99000+ $0.0128	获得报价查看	PDF RFQ		Diodes Incorporated	Bipolar Transistors - Pre-Biased 200MW 2.2K	SMD/SMT	SOT-323-3	+ 150 C	DDTB123	Reel			Single	PNP		2.2 kOhms	1	39	500 mA