- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Emitter- Base Voltage VEBO :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
88
有现货
|
Microsemi | Bipolar Transistors - BJT Power BJT | Through Hole | TO-39-3 | + 200 C | Single | NPN | 80 VDC | 100 V | 5.5 VDC | 750 mVDC | 2 A | ||||
|
获得报价 |
95
有现货
|
Microsemi | Bipolar Transistors - BJT Power BJT | Through Hole | TO-39-3 | + 200 C | Single | PNP | 80 VDC | 100 V | 5.5 VDC | 750 mVDC | 2 A | ||||
|
获得报价 |
3
有现货
|
Microsemi | Bipolar Transistors - BJT Power BJT | Through Hole | TO-39-3 | + 200 C | Single | NPN | 80 VDC | 100 V | 5.5 VDC | 750 mVDC | 2 A | ||||
|
获得报价 |
68
有现货
|
Microsemi | Bipolar Transistors - BJT Power BJT | Through Hole | TO-5-3 | + 200 C | Single | PNP | 40 VDC | 40 V | 4 VDC | 750 mVDC | 10 A | ||||
|
获得报价 |
69
有现货
|
Microsemi | Bipolar Transistors - BJT Power BJT | Through Hole | TO-5-3 | + 200 C | Single | PNP | 60 VDC | 60 VDC | 4 VDC | 750 mVDC | 60 MHz | ||||
|
获得报价 |
20
有现货
|
Microsemi | Bipolar Transistors - BJT Power BJT | Through Hole | TO-39-3 | + 200 C | Single | PNP | 80 VDC | 100 V | 5.5 VDC | 750 mVDC | 2 A |