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| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Configuration | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Maximum DC Collector Current | Gain Bandwidth Product fT | |
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查看 | Toshiba | Bipolar Transistors - BJT Bias Resistor Built- in Transistor, 2in1 | SMD/SMT | SOT-363-6 | + 150 C | RN1901 | Single | NPN | 50 V | 10 V | 100 mV | 100 mA | 250 MHz |
